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GIST Scholar College of Engineering Department of Materials Science and Engineering 2. Conference Papers

Band Edge n-MOSFETs with High-k/Metal Gate Stacks Scaled to EOT=0.9nm with Excellent Carrier Mobility and High Temperature Stability

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Author(s)
이병훈
Type
Conference Paper
Issued Date
2006-12-01
URI
https://scholar.gist.ac.kr/handle/local/27171
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