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Effect of Working Pressure on Structural, Electrical, and Optical Properties of Phosphorus-doped p-type ZnO Thin Films Grown by RF-magnetron Sputterin

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Author(s)
박성주
Type
Conference Paper
Citation
The 34th International Symposium on Compound Semiconductors(ISCS 2007), pp.0
Issued Date
2007-10-15
Conference Place
JA
URI
https://scholar.gist.ac.kr/handle/local/26732
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