OAK

Oxide-trapping model for physics-based 1/f noise analysis in MOSFETs

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Author(s)
HONG, SUNG MINJun-Myung WooHong-Hyun ParkYoung-June ParkHong-Shick Min
Type
Conference Paper
Citation
한국반도체학술대회
Issued Date
2008-02-01
Publisher
한국반도체
Conference Place
KO
URI
https://scholar.gist.ac.kr/handle/local/26558
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