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Structural and electrical properties of InAs grown on AlAs0.32Sb0.68 meta-morphic buffer layer/GaAs and its application to THz emission

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Author(s)
S.Y. KimS.H. ShinJ. D. SongI. K. HanT. W. KimJHO, Young Dahl
Type
Conference Paper
Citation
The 18th International Conference on Electronic Properties of Two-Dimensional Systems (EP2DS-18)
Issued Date
2009-07-23
Publisher
The Physical Society of Japan
Conference Place
JA
URI
https://scholar.gist.ac.kr/handle/local/25563
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