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Investigation of noise performance of double-gate MOSFETs by deterministic simulation of Boltzmann equation

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Author(s)
HONG, SUNG MINChristoph Jungemann
Type
Conference Paper
Citation
International Conference on Simulation of Semiconductor Processes and Devices, pp.103 - 106
Issued Date
2009-09-10
Publisher
International Conference on Simulation of Semiconductor Processes and Devices
Conference Place
US
URI
https://scholar.gist.ac.kr/handle/local/25503
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