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Optical and THz Characterization of p-InAl0.36Sb for Antenna Application

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Abstract
Time-resolved photoreflectance was performed simultaneously with THz radiation measurements in a series of p-doped InAl0.36Sb. Carrier decay time can be as short as 350 fs depending on the doping density, which showed correlation with THz emission features. © 2009 IEEE.
Author(s)
Hoonil JeongJihoon JeongYoungbin HongJHO, Young DahlS.H. ShinS.Y. KimJ.I LeeJ.D. Song
Issued Date
2009-09-24
Type
Conference Paper
DOI
10.1109/ICIMW.2009.5324683
URI
https://scholar.gist.ac.kr/handle/local/25489
Publisher
IEEE
Citation
34th International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2009
Conference Place
KO
Paradise Hotel, Busan, Korea
Appears in Collections:
Department of Electrical Engineering and Computer Science > 2. Conference Papers
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