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Physics-based simulation of 1/f noise in MOSFETs under large-signal operation

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Author(s)
HONG, SUNG MINHong-Hyun ParkChan Hyeong ParkMyoung Jin LeeHong Shick MinYoung June Park
Type
Conference Paper
Citation
International Conference on Simulation of Semiconductor Processes and Devices, pp.89 - 92
Issued Date
2009-09-26
Publisher
International Conference on Simulation of Semiconductor Processes and Devices
Conference Place
AU
URI
https://scholar.gist.ac.kr/handle/local/25483
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