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Fabrication of cross-bar type 1D(diode)-1R(resistor) stacked hybrid memory device

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Author(s)
정건영
Type
Conference Paper
Citation
International Conference on Nano Science and Nano Technology
Issued Date
2010-11-08
Publisher
International Conference on Nano Science and Nano Technology
Conference Place
KO
URI
https://scholar.gist.ac.kr/handle/local/24609
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