Fabrication of cross-bar type 1D(diode)-1R(resistor) stacked hybrid memory device
- Author(s)
- 정건영
- Type
- Conference Paper
- Citation
- International Conference on Nano Science and Nano Technology
- Issued Date
- 2010-11-08
- Publisher
- International Conference on Nano Science and Nano Technology
- Conference Place
- KO
- URI
- https://scholar.gist.ac.kr/handle/local/24609
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