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GIST Scholar College of Information and Computing Department of Electrical Engineering and Computer Science 2. Conference Papers

Mobility calculation for nanoscale multi-gate FETs with arbitrary two-dimensional cross section with a homogeneous channel including strain effects

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Author(s)
HONG, SUNG MIN; Woosung Choi; Wonsok Lee; Young Tae Kim; Uihui Kwon; Keun-Ho Lee; Youngkwan Park
Type
Conference Paper
Citation
International Conference on Simulation of Semiconductor Processes and Devices, pp.360 - 363
Issued Date
2012-09-05
Publisher
IEEE
Conference Place
US
URI
https://scholar.gist.ac.kr/handle/local/23580
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