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Enhanced optical power of InGaN/GaN light-emitting diode by AlGaN interlayer and electron blocking layer

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Author(s)
박성주
Type
Conference Paper
Citation
International Workshop on Nitride Semiconductors 2012 (IWN 2012)
Issued Date
2012-10-16
Publisher
International Workshop on Nitride Semiconductors 2012 (IWN 2012)
Conference Place
JA
URI
https://scholar.gist.ac.kr/handle/local/23526
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