AC NEGF Simulation: Efficient Implementation and Application to Nanosheet MOSFETs

Abstract

This work presents the AC NEGF simulation approach. Based upon the solution of the conventional DC NEGF code, the AC response of the electrostatic potential and the electron density can be calculated. A scaled nanosheet MOSFET is simulated. It is demonstrated that the AC response of the electron density of the nanoscale shows dependences on the frequency and the bias condition.