Numerical analysis of p-GaAs/n-GaAs tunnel junction employing InAs intermediate layer for high concentrated photovoltaic applications

Abstract

We report the numerical analysis of p-GaAs/n-GaAs tunnel junction employing InAs as the intermediate layer at the junction. Incorporation of this intermediate layer introduces an intermediate level at the junction bandgap leading to enhanced tunneling of carriers. By doing so, we obtain a two order of enhancement in the tunnel current. Furthermore, the performance of GaInP/GaAs dual-junction solar cells using the TJ with InAs intermediate layer is calculated under concentrated suns condition and it shows a conversion efficiency exceeding 30% under 1800 suns condition. © Published under licence by IOP Publishing Ltd.