OAK

Improved ohmic contact by pre-annealing process in quaternary In0.04Al0.65Ga0.31N/GaN HEMTs

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Author(s)
Ha Jin MunJi Hyun HwangYoung-Ki KwonHong, Sung-MinJae-Hyung Jang
Type
Conference Paper
Citation
Compound Semiconductor Week
Issued Date
2017-05-15
Publisher
Fraunhofer institute
Conference Place
GE
URI
https://scholar.gist.ac.kr/handle/local/20338
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