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GIST Repository College of Information and Computing Department of Electrical Engineering and Computer Science 2. Conference Papers

Quaternary In0.04Al0.55Ga0.41N/GaN HEMTs with In0.1Ga0.9N back barrier

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Author(s)
Ji Hyun Hwang; Suhyeong Cha; Young-Ki Kwon; Ha Jin Mun; Hong, Sung-Min; Jang, Jae Hyung
Type
Conference Paper
Citation
44th International Symposium on Compound Semiconductors (ISCS)
Issued Date
2017-05-16
Publisher
Fraunhofer institute
Conference Place
GE
URI
https://scholar.gist.ac.kr/handle/local/20336
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