Comparative Study in Terahertz Modulation Enhancement Based on Hybrid Devices of Perovskite and Silicon

Abstract

Methylammonium lead halide perovskites (MAPbX3, where X = I, Cl, and Br) have come in the spotlight as alternative devices of silicon for next-generation solar cells owing to its extraordinary photovoltaic property, ease of fabrication, and low cost, which has exhibited power conversion efficiencies of up to 20.5% [1]. In addition, perovskites have recently shown the further application in optically-controllable THz wave modulators in the forms of hybrid structures of perovskites and silicon (perovskite/Si). The modulation efficiencies have been enhanced based on the carrier accumulation at the interface of the perovskite and silicon using external 400-nm and 500-nm continuous lasers [2, 3].