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Self-consistent calculation of electron mobility in Si, Ge, and In0.53Ga0.47As inversion layers

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Author(s)
Geon-Tae JangHong, Sung-Min
Type
Conference Paper
Citation
Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices
Issued Date
2017-07-04
Publisher
The Institute of Electronics and Information Engineers
Conference Place
KO
URI
https://scholar.gist.ac.kr/handle/local/20274
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