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Phonon Mean Free Path Spectrum of Single Crystalline Silicon Thin Film

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Abstract
With the advanced fabrication technology, the density of transistor keeps increasing and the design is getting more complexed. Fourier’s law, which is applied for heat conduction in bulk materials, becomes unsuitable for thermal transport at this micro- and nano-scale system. Especially, when phonon mean free path (MFP) is longer than the characteristic length of a system, phonons in the system tends to be scattered significantly at the boundary, leading to the reduction of thermal conductivity. Therefore, nanostructuring is one of attractive ways to manipulate the thermal conductivity of material in some applications such as modeling thermal management and designing thermoelectric materials. To predict the extent of thermal conductivity reduction via nanostructuring, it is significantly crucial to figure out the contribution of each MFP to thermal conductivity, which is knowon as phonon MFP spectrum. Thus, there have been numerous theoretical and experimental studies up to date. The 1st principle calculation has been successful to predict the MFP spectrum for simple atomic structures such as Si, Ge, and etc. However, it is challenging and time consuming to extend the same approach to nanostructures. Among experimental approaches, the TDTR (time-domain thermoreflectance) and TTG (thermal grating method) are representative for this research but have some limitations. The former adopts a metal transducer, which makes the analysis complicated, and the latter is limited in decreasing the size of grating, i.e., the characteristic length, due to the diffraction limit of light. Also, most of previous works have studied only about bulk-scale materials, even though modern micro- or nanoelectronic devices are often based on thin film structures. In this work, nanoslits with various widths, which were patterned on a suspended silicon nano-film using EBL (e-beam lithography) and RIE (reactive ion etching process), provided varied ballistic thermal resistances. The effective thermal conductivity values of nanoslit-films were measured in a temperature range of 40–300 K using micro-suspended devices, which were individually fabricated from SOI (silicon-on-insulator) wafer. Additionally, to better understand the measurement results, discrete ordinate method was used with inputs by 1st principle calculation. From the measurement results, the phonon MFP spectrum was extracted by a convex optimization, using suppression function obtained by solving freqeuency-independent Boltzmann transport equation. This study offers, for the first time, the phonon MFP spectrum for Si thin film using a non-optical experimental approach.
Author(s)
김태훈
Issued Date
2025
Type
Thesis
URI
https://scholar.gist.ac.kr/handle/local/19577
Alternative Author(s)
Taehoon Kim
Department
대학원 기계로봇공학부
Advisor
Seol, Jae Hun
Table Of Contents
Abstract ․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․ i
Contents ․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․ iii
List of Figures ․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․ vi
List of Tables ․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․ vii
CHAPTER 1. INTRODUCTION․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․ 1
1.1. Phonon: carrier of heat energy․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․ 1
1.2. Importance of phonon MFP․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․ 2
1.3. Phonon MFP spectrum ․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․ 2
1.4. Previous experimental studies․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․ 3
1.5. Organization of this Thesis․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․ 4
CHAPTER 2. EXPERIMENTAL METHOD ․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․ 5
2.1. Introduction ․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․ 5
2.2. Evolution of measurement device design․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․ 5
2.3. Fabrication of nanoslit pattern․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․ 9
2.4. Measurement device preparation․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․ 11
2.5. AC heating measurement method․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․ 13
2.6. Third and second harmonic analysis for measurement validation․․․․․․․․․․․․․․․․․․․․․․․ 14
2.7. TCR fitting and compensation methodology․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․ 15
2.8. Experimental setup․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․ 18
2.9. Summary․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․ 19
CHAPTER 3. NUMERICAL METHOD ․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․ 20
3.1. Introduction ․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․ 20
3.2. Workflow of the numerical method․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․ 20
3.3. Phonon properties from DFT calculation․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․ 21
3.4. Discrete ordinate method for phonon Boltzmann transport equation․․․․․․․․․․․․․․․․․․․․ 22
3.4.1. Integrating phonon properties․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․ 22
3.4.2. Phonon Boltzmann transport equation with phonon intensity․․․․․․․․․․․․․․․․․․ 23
3.4.3. Boundary condition․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․ 25
3.5. Verification of model reliability and convergence testing․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․ 26
3.6. Summary․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․ 28
CHAPTER 4. MEAN FREE PATH SPECTRUM EXTRACTION PROCESS․․․․․․․․․․․․․․․․․ 28
4.1. Introduction․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․ 28
4.2. Phonon MFP spectrum extraction․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․ 29
4.3. Suppression function ․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․ 30
4.4. L-curve method ․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․ 32
4.5. Summary․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․ 33
CHAPTER 5. RESULTS and DSICUSSION․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․.․․․․․․․․․․․․․․․. 34
5.1. Thermal conductivity measurement of Si nano-film․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․ 34
5.2. Verification of ballistic thermal transport in experimental results․․․․․․․․․․․․․․․․․․․․․․․․ 35
5.3. Verification of ballistic thermal transport in numerical results․․․․․․․․․․․․․․․․․․․․․․․․․․․ 36
5.4. Phonon MFP spectra of single crystalline Si thin film․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․ 37
CHAPTER 6. SUMMARY AND FUTURE WORKS․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․ 39
6.1. Summary․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․ 39
6.2. Future works․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․ 40
References․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․.․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․.․ 41
Acknowledgements ․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․.․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․․ 47
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