Development of Transition Metal Dichalcogenides as Single-Source-Precursor for Chemical Vapor Deposition

Abstract

Transition Metal Dichalcogenides (TMDs), which have semiconductor capabilities and a wide bandgap, have attracted researchers' interest as a next-generation photoelectronic device and silicon semiconductor material. Synthesizing high-quality TMDs thin films, however, has some drawbacks. If a single source precursor for Chemical Vapor Deposition (CVD) is used, it is possible to synthesize a high-quality TMDs thin film at a low temperature in a large part with a simple CVD process setting. This research synthesized Pd complexes with unique structures that included a Se ligand and new Pd complex was characterized by technique like 1H NMR, MS, EA, XRD. The efficiency of the Pd complex as a single source precursor for CVD was evaluated, and That was confirmed that Pd17Se15, Pd34Se11 and Pd7Se4 particles were generated via CVD synthesis. Furthermore, the Pd complex was tested as a Suzuki-coupling and C-H activation catalysts.