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2D Materials in Logic Technology: Power Efficiency and Scalability in 2DM-MBC CFET

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Abstract
Sustaining digital evolution demands high-performance logic technology with a high density, high speed, and low power consumption to process large data sets efficiently. Power consumption remains a critical issue in miniaturized logic devices, impacting reliability, device lifetime, and circuit scalability. This review explores key parameters in logic FETs to manage power consumption, examining advancements in both unit and array structures. We provide a detailed overview of the development history of logic FETs, highlighting structural innovations and challenges for achieving low power consumption. Furthermore, we investigate the state-of-the-art potential of 2D materials (2DMs) in 3D-stacked structures, such as 2DM-MBC CFETs, emphasizing their benefits for ultralow power devices. Finally, we address the current progress and challenges in developing 2DM NMOS and PMOS for CFET industrialization and present an outlook on advancing 2DM-MBC CFET technology to meet the demands of future logic technology. © 2025 American Chemical Society.
Author(s)
Shin, Seung HeonKang, Dong-HoYoon, Hoon HahnPark, Jin YoungSong, MinukSon, HyeonchangHa, DaewonShin, Hyeon-Jin
Issued Date
2025-04
Type
Article
DOI
10.1021/acs.nanolett.5c01061
URI
https://scholar.gist.ac.kr/handle/local/18732
Publisher
American Chemical Society
Citation
Nano Letters, v.25, no.18, pp.7224 - 7233
ISSN
1530-6984
Appears in Collections:
Department of Semiconductor Engineering > 1. Journal Articles
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