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Magnetic and anisotropy and electronic transport properties insingle-crystalline compounds of EuCu2G2 and EuCu2Si2

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Author(s)
Rhyee, J.-S.Cho, Beong KiRi, H.C.
Type
Article
Citation
Journal of Applied Physics, v.93, no.10, pp.8346 - 8348
Issued Date
2003-05
Abstract
We present the temperature dependent magnetization, M(T), and the resistivity, rho(T), of EuCu2Ge2 and EuCu2Si2 in single crystalline form. The EuCu2Ge2, which is synthesized in single-crystalline form, shows two different magnetic transitions in M(T) at T-Mc=8.5 K and T-Mab=4 K depending upon the magnetic field orientation. On the other hand, the rho(T) reveals only one transition at T=4 K as a sudden drop of the rho(T) without any noticeable change at T=8.5 K. For the EuCu2Si2, M(T) shows a two step antiferromagnetic transition at T(N1)approximate to10 K and T(N2)approximate to4 K, which is smeared out under Hgreater than or equal to1 T, probably due to field induced spin orientation. The transition at T-N2 is also manifested as a decrease in rho(T) due to loss of magnetic scattering. Interestingly, another exotic transition is found at T=2 K in rho(T) data. The rho(T) values rapidly increase by two orders of magnitude from rho=20 muOmega cm at T=2 K and reach rho=5 mOmega cm at T=0.5 K, which is similar to a metal-insulator transition. (C) 2003 American Institute of Physics.
Publisher
American Institute of Physics
ISSN
0021-8979
DOI
10.1063/1.1556278
URI
https://scholar.gist.ac.kr/handle/local/18360
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