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High-photosensitivity p-channel organic phototransistors based on a biphenyl end-capped fused bithiophene oligomer

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Abstract
We report highly photosensitive organic phototransistors (OPTs) based on a 2,5-bis-biphenyl-4-yl-thieno[3,2-b]thiophene (BPTT). The measured maximum sensitivity and the ratio of photocurrent to dark current (I-ph/I-dark) in BPTT OPTs were 82 A/W and 2.0x10(5) under 380 nm UV light with 1.55 mW/cm(2), respectively. The prepared OPTs show a photocurrent response similar to the absorption spectrum of BPTT. The major mechanisms for photocurrent amplification in this device were verified from experimental results as photovoltaic (turn-on) and photocurrent effect (turn-off) by a fitting to theoretic equations. (C) 2005 American Institute of Physics.
Author(s)
Noh, YYKim, Dong-YuYoshida, YYase, KJung, BJLim, EShim, HK
Issued Date
2005-01
Type
Article
DOI
10.1063/1.1856144
URI
https://scholar.gist.ac.kr/handle/local/18141
Publisher
American Institute of Physics
Citation
Applied Physics Letters, v.86, no.4, pp.043501-3
ISSN
0003-6951
Appears in Collections:
Department of Materials Science and Engineering > 1. Journal Articles
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