Circuit fabrication at 17 nm half-pitch by nanoimprint lithography

Abstract

High density metal cross bars at 17 nm half-pitch were fabricated by nanoimprint lithography. Utilizing the superlattice nanowire pattern transfer technique, a 300-layer GaAs/AlGaAs superlattice was employed to produce an array of 150 Si nanowires (15 nm wide at 34 nm pitch) as an imprinting mold. A successful reproduction of the Si nanowire pattern was demonstrated. Furthermore, a cross-bar platinum nanowire array with a cell density of approximately 100 Gbit/cm 2 was fabricated by two consecutive imprinting processes. © 2006 American Chemical Society.