GIST Scholar
College of Engineering
Department of Materials Science and Engineering
1. Journal Articles
Circuit fabrication at 17 nm half-pitch by nanoimprint lithography
- Type
- Article
- Citation
- NANO LETTERS, v.6, no.3, pp.351 - 354
- Issued Date
- 2006-03
- Abstract
- High density metal cross bars at 17 nm half-pitch were fabricated by nanoimprint lithography. Utilizing the superlattice nanowire pattern transfer technique, a 300-layer GaAs/AlGaAs superlattice was employed to produce an array of 150 Si nanowires (15 nm wide at 34 nm pitch) as an imprinting mold. A successful reproduction of the Si nanowire pattern was demonstrated. Furthermore, a cross-bar platinum nanowire array with a cell density of approximately 100 Gbit/cm 2 was fabricated by two consecutive imprinting processes. © 2006 American Chemical Society.
- Publisher
- AMER CHEMICAL SOC
- ISSN
- 1530-6984
- Appears in Collections:
- Department of Materials Science and Engineering > 1. Journal Articles
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