Influence of thermal annealing on the bulk scattering in giant-magnetoresistance spin-valve with nano-oxide layers

Abstract

Based upon a bulk scattering model, we investigated the variation of giant magnetoresistance (GMR) behavior after thermal annealing at T(a)=250 degrees C as a function of the top free layer thickness of a GMR spin valve with nano-oxide layers (NOLs). It was found that the enhancement of GMR ratio after thermal annealing is explained qualitatively in terms of the increase of active GMR region in the free layer and, simultaneously, the increase of intrinsic spin-scattering ratio. These effects are likely due to the improved specular reflection at the well-formed interface of NOL. Furthermore, we developed a modified phenomenological model for sheet conductance change (Delta G) in terms of the top free layer thickness. This modified model was found to be useful in the quantitative analysis of the variation of the active GMR region and the intrinsic spin-scattering properties. The two physical parameters were found to change consistently with the effects of thermal annealing on NOL. (C) 2006 American Institute of Physics.