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Effects of copper oxide/gold electrode as the source-drain electrodes in organic thin-film transistors

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Abstract
This study examines bilayer source-drain electrodes for organic thin-film transistors (OTFTs). Between the pentacene layer and the Au layer, a p-type metal oxide layer was inserted. p-Type metal oxide was prepared by thermally evaporating copper oxide (CuO). To compare the effect of the CuO layer, a device with a single Au layer as the source-drain electrode was fabricated. The field-effect mobility of the device with the CuO (10nm)/Au (50 nm) bilayer electrodes was 0.34 (+/- 0.04) cm(2)/V s, and it was higher than the device with a single Au layer electrode [0.16 (+/- 0.03) cm(2)/V s]. (c) 2007 The Electrochemical Society.
Author(s)
Park, Jeong-WooBaeg, Kang-JunGhim, JieunKang, Seok-JuPark, Jeong-HoKim, Dong-Yu
Issued Date
2007-08
Type
Article
DOI
10.1149/1.2774683
URI
https://scholar.gist.ac.kr/handle/local/17607
Publisher
Electrochemical Society, Inc.
Citation
Electrochemical and Solid-State Letters, v.10, no.11, pp.340 - 343
ISSN
1099-0062
Appears in Collections:
Department of Materials Science and Engineering > 1. Journal Articles
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