GIST Scholar
College of Engineering
Department of Materials Science and Engineering
1. Journal Articles
Improvement of light extraction efficiency in GaN-based light emitting diodes by random pattern of the p-GaN surface using a silica colloidal mask
- Type
- Article
- Citation
- Japanese Journal of Applied Physics, v.47, no.7, pp.5327 - 5329
- Issued Date
- 2008-07
- Abstract
- A two-dimensional silica colloidal particle was used to etch a p-GaN surface. By treating the p-GaN surface with polyelectrolyte (PE), mono-dispersed silica colloidal particles, 500 nm in diameter, could be uniformly distributed on a 2-in. p-GaN surface. The patterns on the p-GaN surface were produced by a plasma etching process using these colloidal particles as a mask. Etching depths of 150 and 200 run were produced on the p-GaN surface of LED samples and an increase in the Optical Output power of 46.7% was observed compared to a reference sample without patterns on the p-GaN surface.
- Publisher
- JAPAN SOCIETY APPLIED PHYSICS
- ISSN
- 0021-4922
- Appears in Collections:
- Department of Materials Science and Engineering > 1. Journal Articles
- Files in This Item:
-
-
There are no files associated with this item.
-
Items in Repository are protected by copyright, with all rights reserved, unless otherwise indicated.