Reliable organic nonvolatile memory device using a polyfluorene-derivative single-layer film

Abstract

This letter describes the reversible switching performance of metal-organic-semiconductor (MOS) memory devices containing a polyfluorene-derivative single-layer film. The space-charge-limited current contributes to the switching behavior of WPF-oxy-F memory devices. The polyfluorene derivative reported here provides a significant advance to the field of organic semiconductors because it provides a type of organic memory material for nonvolatile memory devices. The following properties are responsible for its memory capabilities: its use of a single-layer film, a large on/off ratio (I(on)/I(off) similar to 10(4)), a long retention time (more than 10 000 s), acceptable thermal stability up to 120 degrees C, and an excellent device-to-device switching uniformity.