Organic Thin-Film Transistors Based on alpha,omega-Dihexyldithienyl-Dihydrophenanthrene

Abstract

The facile synthesis of an organic semiconductor to fabricate the thin-film transistors (TFTs), was reported. A new semiconductor 2,7-bis-(5'-hexyl-2,2'- bithien-5-yl)-9,10-dihydro-phenanthrene (HT-PT) was used to prepare organic TFTs. It was observed that the TFT devices with HT-PT as semiconducting layer show hole mobilities. HT-PT synthesized by using the palladium-catalyzed Suzuki cross-coupling reaction. The thin films deposited on Si/SiO2 substrates. The differential scanning calorimetry (DSC) was used to investigate the thermal properties of the HT-PT. Atomic force microscopy (AFM) analysis of surface properties revealed that the thin-film morphologies has uniformly arranged grains. The study found that the changes in the composition of the molecular components can change the electronic properties of the bulk materials.