Large area InGaAs/GaAs resonant cavity enhanced photodetector for sensor application

Abstract

This study deals with the fabrication and characterization of large area InGaAs/GaAs resonant cavity enhanced photodetector (RCEPD) based on intra-cavity 980 nm vertical cavity surface emitting laser (VCSEL) structure for sensor applications. To incorporate RCEPDs for sensor applications, RCEPD's with reasonable full width half maximum (FWHM) and high quantum efficiency are necessary. Therefore, we designed symmetric and asymmetric contact layer structure RCEPD's having 5 top DBR pairs and different sensitive area sizes. Asymmetric contact layer structure RCEPD showed slightly higher quantum efficiency, reduced FWHM, reduced 3dB bandwidth and a higher resistance than that of symmetric contact layer structure RCEPD.