Extended Lifetime of Organic Field-Effect Transistors Encapsulated with Titanium Sub-Oxide as an 'Active' Passivation/Barrier Layer

Abstract

A thin capping layer of titanium sub-oxide (TiOx) prepared by sol-gel synthesis from titanium alkoxides extends the lifetime of organic FETs. The TiOx layer functions as an 'active' passivation/barrier layer that actually removes oxygen and water vapor from the organic semiconductor. The results demonstrate a significant improvement in the lifetime of organic field-effect transistors when exposed to air.