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Wafer-Level Packaged Light-Emitting Diodes Using Photodielectric Resin

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Abstract
A large area (1600 mu m x 800 mu m) high-brightness light-emitting diode (HB LED) employing rearranged metal pads and multipassivation layers is presented. To enlarge the active layer with a smaller mesa area and improve package productivity using large bonding pads, two electrodes were used to fabricate the LED; a primary electrode was in contact with the n, p-GaN as a conventional LED, and the second electrode was connected to the primary electrode with a passivation layer having photodielectric resin interposed between them. The LED was directly bonded to the metal-core printed circuit board without wire bonding or epoxy molding. The resultant HB LED has a low forward voltage (similar to 3.2 V at 350 mA) due to the optimized n, p-contact scheme, and an optical power of 75 mW with no encapsulation.
Author(s)
Kim, Sang-MookLee, Kwang-CheolYu, Young MoonBaek, Jong HyeobJung, Gun Young
Issued Date
2009-06
Type
Article
DOI
10.1109/LED.2009.2019834
URI
https://scholar.gist.ac.kr/handle/local/17067
Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Citation
IEEE ELECTRON DEVICE LETTERS, v.30, no.6, pp.638 - 640
ISSN
0741-3106
Appears in Collections:
Department of Materials Science and Engineering > 1. Journal Articles
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