Wafer-Level Packaged Light-Emitting Diodes Using Photodielectric Resin
- Abstract
- A large area (1600 mu m x 800 mu m) high-brightness light-emitting diode (HB LED) employing rearranged metal pads and multipassivation layers is presented. To enlarge the active layer with a smaller mesa area and improve package productivity using large bonding pads, two electrodes were used to fabricate the LED; a primary electrode was in contact with the n, p-GaN as a conventional LED, and the second electrode was connected to the primary electrode with a passivation layer having photodielectric resin interposed between them. The LED was directly bonded to the metal-core printed circuit board without wire bonding or epoxy molding. The resultant HB LED has a low forward voltage (similar to 3.2 V at 350 mA) due to the optimized n, p-contact scheme, and an optical power of 75 mW with no encapsulation.
- Author(s)
- Kim, Sang-Mook; Lee, Kwang-Cheol; Yu, Young Moon; Baek, Jong Hyeob; Jung, Gun Young
- Issued Date
- 2009-06
- Type
- Article
- DOI
- 10.1109/LED.2009.2019834
- URI
- https://scholar.gist.ac.kr/handle/local/17067
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