One Transistor-One Resistor Devices for Polymer Non-Volatile Memory Applications

Abstract

1T-1R hybrid-type devices consisting of a silicon transistor and a resistive polymer memory as nonvolatile memory cell elements are demonstrated. Our results show that the operation of the 1T-1R device can be controlled by the resistance states of the polymer memory device. Written or erased data in the 1T-1R devices was maintained for more than 10(4) s.