A thermally resistant and air-stable n-type organic semiconductor: Naphthalene diimide of 3,5-bis-trifluoromethyl aniline

Abstract

We report a thermally resistant and air-stable n-type semiconductor based on our study of naphthalene diimide (NTCDI) derivatives (NI, N2, and N3) with various numbers of electron-withdrawing CF(3) groups. The device using N3, which contains aromatic NTCDI, was found to exhibit an electron mobility (mu(e)) of 0.15 (+/- 0.04)cm(2)/V s (the maximum mu(e) observed was 0.24 cm(2)/V s) and an I(on)/I(off) (at V(d) = 80V) of approximately 2 x 10(5). Moreover, the N3 device exhibits excellent air stability, even when exposed to the open air for 42 days, and significantly better thermal resistance than the previously reported benzylic imide derivative R1. (c) 2009 Elsevier B.V. All rights reserved.