Rewritable Switching of One Diode-One Resistor Nonvolatile Organic Memory Devices

Abstract

One diode one resistor (1D-1R) hybridtype devices consisting of an inorganic Schottky diode and an organic unipolar memory show electrically rewritable switching characteristics as well as rectifying properties. The 1D-1R array architecture improves the sensing efficiency of the array memory cell, ultimately creating the possibility for high-density integrated organic memory devices without restrictions due to cross-talk between cells.