Organic Nano-Floating-Gate Memory with Polymer:[6,6]-Phenyl-C-61 Butyric Acid Methyl Ester Composite Films

Abstract

Here, we report on a pentacene-based, nonvolatile transistor memory device with poly(4-vinyl phenol) (PVP):[6,6]-phenyl-C-61 butyric acid methyl ester (PCBM) nano-composite films as the charge storage site. Incorporation of PCBM molecules into PVP dielectric materials as charge storage sites for electrons resulted in a reversible shift in the threshold voltage (V-Th) and reliable memory characteristics. The characteristics of the pentacene memory device were as follows: a relatively high field-effect mobility (mu(FET)) (0.2-0.3 cm(2) V-1 s(-1)) with a large memory window (ca. 20 V), a high on/off ratio (similar to 10(4)) during writing and erasing with application of an operating gate voltage of 60 V for a short duration time (similar to 1 ms), and a retention time of about 40 h. (C) 2010 The Japan Society of Applied Physics