Resistive Switching Characteristics of Solution-Processed Transparent TiO(x) for Nonvolatile Memory Application

Abstract

We propose a solution-processed transparent TiO(x)-based resistive switching random access memory (ReRAM) device. Electronically active TiO(x) was prepared by sol-gel spin coating of a titanium(IV) isopropoxide precursor on an indium tin oxide-coated glass. The prepared TiO(x) film is completely transparent in the visible range and has an amorphous structure. The fabricated TiO(x)-based ReRAM device exhibits distinct resistive switching under consecutive dc voltage sweeps of +/- 2 V. The device also exhibits good memory performance, including fast switching speed with a pulse width of 1 mu s, stable pulse endurance over 1000 cycles, and excellent retention characteristics at up to 125 degrees C. In addition, based on the log I - log V plot and X-ray photoelectron spectroscopy analysis, we postulate that the fabricated device is operated by the reversible formation/rupture of the conducting filament in the oxygen-deficient TiO(x) layer. (C) 2010 The Electrochemical Society. [DOI: 10.1149/1.3489370] All rights reserved.