Improved Resistive Switching Properties of Solution-Processed TiOx Film by Incorporating Atomic Layer Deposited TiO2 layer

Abstract

Resistive switching characteristics of bilayered titanium oxides layer were investigated. To improve the relatively poor electrical characteristics of solution-processed TiOx active layers, we incorporated an additional thin TiO2 (similar to 8 nm) layer by atomic layer deposition. The bilayered titanium oxide active layer showed a significantly improved performance, such as a larger ON/OFF ratio, a stable resistive switching over 100 times under a dc voltage sweep, cell-to-cell uniformity, and high device yield (>90%). These improved properties can be explained by the transition of the resistive switching mechanism from filamentary switching through the defective side in solution-processed TiOx to interfacial switching resulting from the oxygen ion migration between two active layers. (C) 2011 The Japan Society of Applied Physics