Fabrication of Silicon Nanowire for Detecting beta-Amyloid (1-42) by Nanoimprint Lithography

Abstract

Ultraviolet nanoimprint lithography (UV-NIL) is a high volume and cost-effective patterning technique with sub-10 rim resolution. It has great potential as a candidate for next generation lithography. Using UV-NIL, nanowire patterns were successfully fabricated on a four-inch silicon-on-insulator (SOI) wafer under moderate conditions. The fabricated nanowire patterns were characterized by FE-SEM. Its electrical properties were confirmed by semiconductor parameter analysis. Monoclonal antibodies against beta-amyloid (1-42) were immobilized on the silicon nanowire using a chemical linker. Using this fabricated silicon nanowire device, beta-amyloid (1-42) levels of 1 pM to 100 nM were successfully determined from conductance versus time characteristics. Consequently, the nanopatterned SOI nanowire device can be applied to bioplatforms for the detection of proteins.