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GIST Scholar College of Engineering Department of Materials Science and Engineering 1. Journal Articles

Electrical Characterization of Unipolar Organic Resistive Memory Devices Scaled Down by a Direct Metal-Transfer Method

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Author(s)
Kim, Jin Ju; Cho, Byungjin; Kim, Ki Seok; Lee, Takhee; Jung, Gun Young
Type
Article
Citation
Advanced Materials, v.23, no.18, pp.2104 - +
Issued Date
2011-05
Abstract
Unipolar organic resistive memory devices with cell sizes of 2 mu m and 100 nm are demonstrated by a nonaqueous direct metal-transfer (DMT) method, presenting high ON/OFF ratios and reliable memory performance. The developed DMT method can be extensively utilized to fabricate crossbar array devices with nanometer scale junctions, demonstrating the feasibility of highly integrated organic memory device applications.
Publisher
United Nations Industrial Developement Organization
ISSN
0935-9648
DOI
10.1002/adma.201100081
URI
https://scholar.gist.ac.kr/handle/local/16346
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