Electrical Characterization of Unipolar Organic Resistive Memory Devices Scaled Down by a Direct Metal-Transfer Method

Abstract

Unipolar organic resistive memory devices with cell sizes of 2 mu m and 100 nm are demonstrated by a nonaqueous direct metal-transfer (DMT) method, presenting high ON/OFF ratios and reliable memory performance. The developed DMT method can be extensively utilized to fabricate crossbar array devices with nanometer scale junctions, demonstrating the feasibility of highly integrated organic memory device applications.