Electroluminescence enhancement of (11(2)over-bar2) semipolar GaN light-emitting diodes grown on miscut m-plane sapphire substrates

Abstract

(11 (2) over bar2) semipolar GaN thin films were grown on intentionally miscut m-plane sapphire substrates using metal organic chemical vapor deposition. We investigated the material and electrical characteristics by changing the miscut angle from -1 degrees to +1 degrees. While the coexistence of (11 (2) over bar2) surface and inclined {10 (1) over bar} surfaces was observed on GaN films on the on-axis m-plane sapphire substrates, {10 (1) over bar} surfaces were dominant on the GaN films on the +1 degrees miscut sapphire substrates. As the miscut angle was changed from -1 degrees to +1 degrees, the crystallinity of the GaN films and the electroluminescence intensity of the LEDs were significantly improved. (C) 2011 Elsevier B.V. All rights reserved.