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Syntheses and characterization of new low-band gap polymers containing 4H-cyclopenta[def]phenanthrene unit and 4,7-di(thien-2-yl)-2H-benzimidazole-2-spirocyclohexane for photovoltaic device

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Abstract
Two new low-band gap polymers, poly[(2,6-(4,4-bis(2'-ethylhexyl)-4H-cyclopenta[def]phenanthrene))alt-(5,5-(4',7'-di(thien-2-yl)-2H-benzimidazole-2'-spirocyclohexane))] (PCPP-DTCHBI) and poly[(2,6-(4,4-bis(4-((2-ethylhexyl)oxy)phenyl)-4H-cyclopenta[def]phenanthrene))-alt-(5,5-(4',7'-di(thien-2-yl)- 2H-benzimidazole-2'-spirocyclohexane))] (PBEHPCPP-DTCHBI), were synthesized and characterized for the photovoltaics. These polymers showed typical characteristics of low-band gap polymers through the internal charge transfer (ICT) between 4H-cyclopenta[def]phenanthrene as the electron-rich unit and di(thien-2-yl)-2H-benzimidazole-2'-spirocyclohexane as the electron-deficient unit. The highest occupied molecular orbital (HOMO) and lowest unoccupied molecular orbital (LUMO) energy levels are -5.52 and -3.82 eV for PCPP-DTCHBI, and -5.36 and -3.76 eV for PBEHPCPP-DTCHBI, respectively. Optical band gaps of PCPP-DTCHBI and PBEHPCPP-DTCHBI are 1.70 and 1.60 eV, respectively. As compared to the case of poly[(2,6-(4,4-bis(2'-ethylhexyl)-4H-cyclopenta[def]phenanthrene))-alt-(5,5-(4',7'-di(thien-2-yl)-2,1,3-benzothiadiazole))] (PCPP-DTBT), PCPP-DTCHBI shows deeper HOMO energy levels by 0.12 eV and lower band gap by 0.3 eV. The FET mobilities of PCPP-DTCHBI and PBEHPCPP-DTCHBI are 1.19 x 10(-4) and 5.11 x 10(-5) cm(2)/V s, respectively, and the power conversion efficiencies of the solar cell devices of the PCPP-DTCHBI and PBEHPCPP-DTCHBI blended with [6.6]phenyl-C(71)-butyric acid methyl ester (PC(71)BM) are 1.01% and 0.53%, respectively. The newly designed DTCHBI unit can be used as the electron-deficient moiety inducing efficient ICT for low band gap generation while keeping deep HOMO energy level of the polymer. (C) 2011 Elsevier B.V. All rights reserved.
Author(s)
Kim, JaehongPark, Sung HeumKim, JinwooCho, ShinukKim, IlLee, KwangheeSuh, Hongsuk
Issued Date
2011-07
Type
Article
DOI
10.1016/j.synthmet.2011.04.032
URI
https://scholar.gist.ac.kr/handle/local/16257
Publisher
ELSEVIER SCIENCE SA
Citation
Synthetic Metals, v.161, no.13-14, pp.1336 - 1342
ISSN
0379-6779
Appears in Collections:
Department of Materials Science and Engineering > 1. Journal Articles
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