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Enhanced characteristics of pentacene field-effect transistors with graphene electrodes and substrate treatments

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Abstract
Pentacene organic field-effect transistors (OFETs) were fabricated with multilayer graphene films as the source and drain electrodes. The electrical properties of graphene electrode OFETs were monitored as the fabrication conditions were varied with surface treatments on the dielectric layer and substrate. With surface treatments, the performance of the graphene-electrode pentacene OFETs were significantly enhanced; the output currents increased by more than tenfold, and the mobility increased to levels as high as 1.2 cm(2)/V s. Our results may foster the wide application of graphene electrodes in OFETs and other types of organic electronic devices. (C) 2011 American Institute of Physics. [doi:10.1063/1.3629994]
Author(s)
Lee, SangchulKang, Seok-JuJo, GunhoChoe, MinhyeokPark, WoojinYoon, JongwonKwon, TaehyeonKahng, Yung HoKim, Dong-YuLee, Byoung HunLee, Takhee
Issued Date
2011-08
Type
Article
DOI
10.1063/1.3629994
URI
https://scholar.gist.ac.kr/handle/local/16217
Publisher
American Institute of Physics
Citation
Applied Physics Letters, v.99, no.8
ISSN
0003-6951
Appears in Collections:
Department of Materials Science and Engineering > 1. Journal Articles
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