GIST Scholar
College of Engineering
Department of Materials Science and Engineering
1. Journal Articles
Remarkable Enhancement of Hole Transport in Top-Gated N-Type Polymer Field-Effect Transistors by a High-k Dielectric for Ambipolar Electronic Circuits
- Type
- Article
- Citation
- ADVANCED MATERIALS, v.24, no.40, pp.5433 - 5439
- Issued Date
- 2012-10
- Abstract
- A remarkable enhancement of p-channel properties is achieved in initially n-channel dominant ambipolar P(NDI2OD-T2) organic field-effect transistors (OFETs) by the use of the fluorinated high-k dielectric P(VDF-TrFE). An almost two orders of magnitude increase in hole mobility (∼0.11 cm2 V-1 s-1) originates from a strong interface modification at the semiconductor/dielectric interface, which provides high-performance complementary-like inverters and ring oscillator circuits.
- Publisher
- WILEY-V C H VERLAG GMBH
- ISSN
- 0935-9648
- Appears in Collections:
- Department of Materials Science and Engineering > 1. Journal Articles
- Files in This Item:
-
-
There are no files associated with this item.
-
Items in Repository are protected by copyright, with all rights reserved, unless otherwise indicated.