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Efficiency improvement in InGaN-based solar cells by indium tin oxide nano dots covered with ITO films

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Abstract
InGaN based MQW solar cells have been fabricated with 4 different transparent top electrode structures: (1)- ITO 200 nm, (2)-ITO nano dots only, (3)-ITO nano dots on ITO 50 nm and (4)-ITO nano dots on ITO 100 nm. The solar cell with the ITO 50 nm on ITO nano dots under AM 1.5 conditions showed the best results: 2.3 V for V-oc, 0.69 mA/cm(2) for J(sc), 41.8% for peak EQE, and 0.91% for conversion efficiency. Efficiency improvement was possible due to the decreased reflectance achieved by the ITO nano dots covered with an ITO film with optimized thickness. (C) 2012 Optical Society of America
Author(s)
Seo, Dong-JuShim, Jae-PhilChoi, Sang-BaeSeo, Tae HoonSuh, Eun-KyungLee, Dong-Seon
Issued Date
2012-11
Type
Article
DOI
10.1364/OE.20.00A991
URI
https://scholar.gist.ac.kr/handle/local/15785
Publisher
Optical Society of America
Citation
Optics Express, v.20, no.S6, pp.A991 - A996
ISSN
1094-4087
Appears in Collections:
Department of Semiconductor Engineering > 1. Journal Articles
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