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Demonstration of Addressable Organic Resistive Memory Utilizing a PC-Interface Memory Cell Tester

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Abstract
We demonstrated nonvolatile 8 x 8 array organic memory devices utilizing a PC-interface memory cell tester. The organic memory devices composed of a Ag/poly(3-hexylthiophene-2,5-diyl) (P3HT)/p(+) poly-Si structure exhibited excellent memory performance properties, including stable switching behavior, proper statistical distribution, and long retention time. We succeeded in independently addressing and reading the data in the memory cell array using the PC-interface memory cell tester, opening an avenue toward more realistic organic memory device applications.
Author(s)
Cho, ByungjinSong, SunghoonJi, YongsungChoi, Ho-GilKo, Heung ChoLee, Jae-SukJung, Gun YoungLee, Takhee
Issued Date
2013-01
Type
Article
DOI
10.1109/LED.2012.2226231
URI
https://scholar.gist.ac.kr/handle/local/15704
Publisher
Institute of Electrical and Electronics Engineers
Citation
IEEE ELECTRON DEVICE LETTERS, v.34, no.1, pp.51 - 53
ISSN
0741-3106
Appears in Collections:
Department of Materials Science and Engineering > 1. Journal Articles
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