Flexible Complementary Logic Gates Using Inkjet-Printed Polymer Field-Effect Transistors

Abstract

High-performance inkjet-printed top-gate/bottom-contact organic field-effect transistors (OFETs) and complementary electronic circuitry are reported. Blends of poly (vinylidenefluoride-trifluoroethylene) (P(VDF-TrFE)) and poly (methyl methacrylate) (PMMA) dielectrics effectively reduce the operation voltage. At the optimized blend ratio of 7:3 wt.% for P(VDF-TrFE) and PMMA, both p- and n-type printed OFETs show well-balanced high field-effect mobility values (similar to 0.5 cm(2)/V . s) and low threshold voltages (+/- 5 V). The high-performance inverters and various digital logic gates such as NAND, NOR, OR, and XOR are demonstrated on flexible plastic substrates. The inverter shows a high gain (> 25), an ideal inverting voltage near half of the supplied bias (1/2V(DD)), and a high noise immunity (up to 79% of 1/2V(DD)).