Improved light emission through an AlGaN coalescence layer of 365-nm ultraviolet lighting-emitting diodes on patterned sapphire substrates

Abstract

Ultraviolet (UV), 365-nm light-emitting diodes (LEDs) were grown on an AlGaN template on patterned sapphire substrates (PSS) and then compared with those grown on a conventional GaN template. Complete coalescence was achieved by using AlGaN up to 4.9% Al composition, although the AlGaN template displayed more dislocations than the GaN template. The 365-nm UV LEDs on the AlGaN template showed no emission absorption in the template, as seen in the GaN template, because AlGaN is sufficiently far from the absorption edge of GaN. As a result, a total emission enhancement about 4 times stronger than that obtained w hat using the GaN template was obtained at 80 mA.