Effect of indium composition on carrier escape in InGaN/GaN multiple quantum well solar cells

Abstract

The influence of indium composition on carrier escape was studied considering recombination in InGaN/GaN multiple quantum well solar cells with indium compositions of 17% and 25%. Competition between tunneling and recombination turned out to act as a crucial role for the short-circuit current density (J(sc)) and fill factor (FF). To enhance the J(sc) and the FF, the tunneling-dominant carrier decay rather than recombination is required in the operating range of the solar cells which is possible by optimizing the band structures for a shorter tunneling time and by improving the crystalline quality for a longer recombination time. (C) 2013 AIP Publishing LLC.