Nonvolatile Ferroelectric P(VDF-TrFE) Memory Transistors Based on Inkjet-Printed Organic Semiconductor

Abstract

Nonvolatile ferroelectric poly(vinylidene fluoride-co-trifluoroethylene) memory based on an organic thin-film transistor with inkjet-printed dodecyl-substituted thienylenevinylene-thiophene copolymer (PC12TV12T) as the active layer is developed The memory window is 4.5 V with a gate voltage sweep of -12.5 V to 12.5 V The field effect mobility, on/off ratio, and gate leakage current are 0.1 cm(2)/Vs, 10(5), and 10(-10) A, respectively. Although the retention behaviors should be improved and optimized, the obtained characteristics are very promising for future flexible electronics.