Enhanced Light Extraction of GaN Based Blue Light-Emitting Diode with SiO2/ITO Photonic Crystal Structure

Abstract

We report on the enhancement of light output power of InGaN/GaN multiple quantum well blue (lambda = 450 nm) light-emitting diodes (LEDs) containing an SiO2/ITO (indium tin oxide) photonic crystal (PC) fabricated on p-GaN. The radius, period, and height of SiO2 pillars in the SiO2/ITO PC are 75 nm, 256.5 nm, and 225 nm, respectively. The electrical properties of LEDs are not degraded by formation of an SiO2/ITO PC on the p-GaN. A 36% increase in the optical output power is observed at an input current of 20 mA for LEDs with an SiO2/ITO PC structure. (C) 2012 The Electrochemical Society. All rights reserved.