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GIST Scholar College of Engineering Department of Materials Science and Engineering 1. Journal Articles

Enhanced Light Extraction of GaN Based Blue Light-Emitting Diode with SiO2/ITO Photonic Crystal Structure

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Author(s)
Kwon, Min-Ki; Kim, Ja-Yeon; Kim, Ki Seok; Jung, Gun Young; Lim, Wantea; Kim, Sung-Tae; Park, Seong-Ju
Type
Article
Citation
ECS Journal of Solid State Science and Technology, v.2, no.1, pp.P13 - P15
Issued Date
2013-11
Abstract
We report on the enhancement of light output power of InGaN/GaN multiple quantum well blue (lambda = 450 nm) light-emitting diodes (LEDs) containing an SiO2/ITO (indium tin oxide) photonic crystal (PC) fabricated on p-GaN. The radius, period, and height of SiO2 pillars in the SiO2/ITO PC are 75 nm, 256.5 nm, and 225 nm, respectively. The electrical properties of LEDs are not degraded by formation of an SiO2/ITO PC on the p-GaN. A 36% increase in the optical output power is observed at an input current of 20 mA for LEDs with an SiO2/ITO PC structure. (C) 2012 The Electrochemical Society. All rights reserved.
Publisher
Electrochemical Society, Inc.
ISSN
2162-8769
DOI
10.1149/2.015301jss
URI
https://scholar.gist.ac.kr/handle/local/15363
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