GIST Scholar
College of Engineering
Department of Materials Science and Engineering
1. Journal Articles
Enhanced Internal Quantum Efficiency and Light Extraction Efficiency of Light-emitting Diodes with Air-gap Photonic Crystal Structure Formed by Tungsten Nano-mask
- Type
- Article
- Citation
- BULLETIN OF THE KOREAN CHEMICAL SOCIETY, v.35, no.3, pp.705 - 708
- Issued Date
- 2014-03
- Abstract
- We demonstrate the blue InGaN/GaN multiple quantum wells light-emitting diodes (LEDs) with an embedded air-gap photonic crystal (PC) which was fabricated by the lateral epitaxial overgrowth of GaN layer on the tungsten (W) nano-masks. The periodic air-gap PC was formed by the chemical reaction of hydrogen with GaN on the W nano-mask. The optical output power of LEDs with an air-gap PC was increased by 26% compared to LEDs without an air-gap PC. The enhanced optical output power was attributed to the improvement in internal quantum efficiency and light extraction efficiency by the air-gap PC embedded in GaN layer.
- Publisher
- KOREAN CHEMICAL SOC
- ISSN
- 0253-2964
- Appears in Collections:
- Department of Materials Science and Engineering > 1. Journal Articles
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